References
1. M.J.Sailor, C.L.Curtis,
K.P.Dancil, E.J.Lee, J.H.Song. Proc. Int. Conf.
Porous Semiconductors, Science & Technology,
Mallorca, 1998, p.114.
2. G.Cullis, L.T.Canham, P.D.G.Calcott, J.Appl.Phys.,
82 (1997) 909.
3. Y.S. Tsuo, Y.Xiao, C.A.Moore, In: Porous silicon,
ed. by Z.C.Fengs and R.Tsu, World Scientific, Singapore,
1994.
4.V.A.Skryshevsky, A.Laugier, V.I.Strikha, V.A.Vikulov.
Mat.Sci.Eng. B40 (1996) 54.
5.M.J.Sailor, E.Lee, J.Adv.Mater, 9 (1997)
783.
6.J.M.Lauerhaas, G.M.Credo, J.L.Heinrich, M.J.Sailor,
J.Am.Chem.Soc., 114 (1992) 1911.
7.G.Dolino, D.Bellet, Thin Solid Films, 255
(1995) 132.
8.J.M.Rehm, G.L.Mclendon, L.Tsybeskov, P.M.Fauchet,
Appl.Phys.Lett, 66 (1995)3669.
9.V.M.Dubin, F.Ozanam, J.N.Chazalviel, Phys.Rev.B,
50 (1994)14867.
10M.A.Hory, R.Herino, M.Ligeon, F.Muller, F.Gaspard,
I.Mihalcescu, J.C.Vial, Thin Solid Films, 255
(1995) 200.
11. J.L.Coffer, S.C.Lilley, R.A.Martin, L.A.Files-Sesler,
J.Appl.Phys., 74 (1993) 2094.
12. T.Dittrich, E.A.Konstantinova, V.Ya.Timoshenko,
Thin Solid Films, 255 (1995) 238.
13. M.Ben-Chorin, A.Kux, I.Schechter, Appl.Phys.Lett.,
64 (1994) 481.
14. K.Li, D.C.Diaz, J.C.Campbell, C.Tsai, In: Porous
silicon, ed. by Z.C.Fengs and R.Tsu, World Scientific,
Singapore, 1994, p. 261
15. G.D.Francia, V.L.Ferrara, L.Quercia, Proc.
Int. Conf. Porous Semiconductors, Science
& Technology, Mallorca, 1998, p.173.
16. St.Frohnhoff, M.G.Berger, M.Thonissen, C.Dieker,
L.Vescan, H.Munder, H.Luth, Thin Solid Films,
255 (1995) 59.
17. N.Koshida, H.Koyama, Y.Suda, Y.Yamamoto,
M.Araki, T.Saito, K.Sato, N.Sata, S.Shin, Appl.Phys.Lett.,
63 (1993) 774.
18. P.M.Fauchet. In: Porous Silicon, ed.Z.C.Feng,
R.Tsu, World Scientific, Singapore, 1994, p.449.
19. F.Kozlowski, P.Steiner, W.Lang, In: Porous
Silicon, ed.Z.C.Feng, R.Tsu, World Scientific, Singapore,
1994, p.149.
20. S.Guha, P.Steiner, F.Kozlowski, W.Lang, J.
Porous Mater., 4 (1997) 227.
21. V.A.Skryshevsky, V.A.Vikulov, V.I.Strikha,
L.Tristani. In: Fabrication, properties and applications
of low-dimensional semiconductor structures, Ed.
M.Balkanski, NATO ASI Series, Kluwer, 1995, p.173.
22. H.Elhouichet, M.Oueslati, B.Bessais, H.Ezzaouia,
Proc. Int. Conf. Porous Semiconductors,
Science & Technology, Mallorca, 1998,
p.194.
23. V.A.Skryshevsky, V.I.Strikha, V.A.Vikulov,
A.V.Kozinetc, A.V.Mamikin, A.Laugier, Proc.
First Polish-Ukrainian Symposium New Photovoltaic
Materials for Solar Cells, Cracow, E-MRS (1996)
p.202
24. T.F.Harper, M.J.Sailor, J.Am.Chem.Soc.,
119 (1997) 6943.
25. E.J.Lee, J.S.Ha, M.J.Sailor. J.Am.Chem.Soc,
117 (1995) 8295.
abstract
1. Introduction
2. Experimental
3. PL of multilayer PS film:
simulation
4. PL of the inhomogeneous PS
film: Influence of The acetone adsorption
5. Conclusions
Captures for the figures
References
V.A.Skryshevsky
Radiophysics Department, Kiev Shevchenko
University,
64 Vladimirskaya, 01033, Kiev, Ukraine, fax.+380-44-2656744,
e-mail: skrysh@uninet.kiev.ua